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SUD25N15-52
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
150
2
4
± 100
V
nA
V DS = 150 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 150 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 150 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 5 A
50
0.042
0.052
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 5 A, T J = 125 °C
V GS = 10 V, I D = 5 A, T J = 175 °C
V GS = 6 V, I D = 5 A
0.047
0.109
0.145
0.060
Ω
Forward
Transconductance b
g fs
V DS = 15 V, I D = 25 A
40
S
Dynamic a
Input Capacitance
C iss
1725
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 75 V, V GS = 10 V, I D = 25 A
216
100
33
9
12
40
pF
nC
Gate Resistance
R g
1
3
Ω
Turn-On Delay Time
c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 50 V, R L = 3 Ω
I D ? 25 A, V GEN = 10 V, R g = 2.5 Ω
70
25
60
100
40
90
ns
Source-Drain Diode Ratings and Characteristics T C = 25 °C
Pulsed Current
I SM
50
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 25 A, V GS = 0 V
I F = 25 A, dI/dt = 100 A/μs
0.9
95
1.5
140
V
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71768
S09-1501-Rev. D, 10-Aug-09
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